2N2222 NPN Transistor (BJT)

Description

2N2222 NPN Transistor (BJT)
The 2N2222 is a widely used silicon NPN Bipolar Junction Transistor (BJT) designed for low-power amplifying and high-speed switching applications. It is an industry-standard component, commonly housed in a TO-92 through-hole package (or TO-18 metal can), making it a staple for hobbyist circuits, prototyping, and educational electronics projects.

* Transistor Type: NPN Bipolar Junction Transistor (BJT)
* Maximum Collector Current (Ic): 800 mA (suitable for driving small motors, relays, and high-power LEDs)
* Collector-Emitter Voltage (Vceo): 30 Volts maximum
* Collector-Base Voltage (Vcbo): 60 Volts maximum
* DC Current Gain (hFE): 100 to 300 (varies based on collector current)
* Maximum Power Dissipation (Pd): 500 mW to 625 mW (depending on package variant)
* Transition Frequency (fT): 250 MHz to 300 MHz (allows for high-speed switching and RF applications)
* Applications: Ideal for logic gate circuits, relay driving, LED switching, low-frequency amplification, and signal modulation