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{"id":52122,"date":"2026-09-17T12:21:29","date_gmt":"2026-09-17T12:21:29","guid":{"rendered":"https:\/\/siratek.net\/?post_type=product&p=52122"},"modified":"2026-09-17T12:21:29","modified_gmt":"2026-09-17T12:21:29","slug":"2n2222-npn-transistor-bjt","status":"publish","type":"product","link":"https:\/\/siratek.net\/index.php\/product\/2n2222-npn-transistor-bjt\/","title":{"rendered":"2N2222 NPN Transistor (BJT)"},"content":{"rendered":"

2N2222 NPN Transistor (BJT)
\nThe 2N2222 is a widely used silicon NPN Bipolar Junction Transistor (BJT) designed for low-power amplifying and high-speed switching applications. It is an industry-standard component, commonly housed in a TO-92 through-hole package (or TO-18 metal can), making it a staple for hobbyist circuits, prototyping, and educational electronics projects.<\/p>\n

* Transistor Type: NPN Bipolar Junction Transistor (BJT)
\n* Maximum Collector Current (Ic): 800 mA (suitable for driving small motors, relays, and high-power LEDs)
\n* Collector-Emitter Voltage (Vceo): 30 Volts maximum
\n* Collector-Base Voltage (Vcbo): 60 Volts maximum
\n* DC Current Gain (hFE): 100 to 300 (varies based on collector current)
\n* Maximum Power Dissipation (Pd): 500 mW to 625 mW (depending on package variant)
\n* Transition Frequency (fT): 250 MHz to 300 MHz (allows for high-speed switching and RF applications)
\n* Applications: Ideal for logic gate circuits, relay driving, LED switching, low-frequency amplification, and signal modulation<\/p>\n<\/body>","protected":false},"excerpt":{"rendered":"